h11b1/ h11b2/ h11b3 document number 83609 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179005 1 2 3 6 5 4 b c e a c nc pb p b -free e3 optocoupler, photodarlington output, high gain, with base connection features ? isolation test voltage, 5300 v rms coupling capacitance, 0.5 pf lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code j din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 description the h11b1/ h11b2/ h11b3 are industry standard optocouplers, consisting of a gallium arsenide infra- red led and a silic on photodarlington. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input output part remarks h11b1 ctr > 500 %, dip-6 h11b2 ctr > 200 %, dip-6 h11b3 ctr > 100 %, dip-6 H11B1-X007 ctr > 500 %, smd-6 (option 7) h11b1-x009 ctr > 500 %, smd-6 (option 9) h11b2-x009 ctr > 200 %, smd-6 (option 9) parameter test condition symbol value unit reverse voltage v r 3.0 v forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 25 v emitter-collector breakdown voltage bv eco 7.0 v collector-base breakdown voltage bv cbo 30 v
www.vishay.com 2 document number 83609 rev. 1.5, 26-oct-04 h11b1/ h11b2/ h11b3 vishay semiconductors coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output collector current (continuous) i c 100 ma power dissipation p diss 150 mw derate linearly from 25 c 2.0 mw/c parameter test condition symbol value unit isolation test voltage between emitter and detector, refer to standard climate 23 c/50 %rh, din 50014 v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? total package dissipation (led plus detector) p tot 260 mw derate linearly from 25 c 3.5 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 sec. parameter test condition part symbol min ty p. max unit forward voltage i f = 50 ma h11b1 v f 1.1 1.5 v h11b2 v f 1.1 1.5 v i f = 10 ma h11b3 v f 1.1 1.5 v reserve current v r = 3.0 v i r 10 a junction capacitance v f = 0 v, f = 1.0 mhz c j 50 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma, i f = 0 ma bv ceo 30 v emitter-collector breakdown voltage i e = 100 a, i f = 0 ma bv eco 7.0 v collector-base breakdown voltage i c = 100 a, i f = 0 ma bv cbo 30 v collector-emitter leakage current v ce = 10 v, i f = 0 ma i ceo 100 na parameter test condition symbol value unit
h11b1/ h11b2/ h11b3 document number 83609 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit saturation voltage collector- emitter i c = 1.0 ma, i c = 1.0 ma v cesat 1.0 v capacitance (input-output) c io 0.5 pf parameter test condition part symbol min ty p. max unit dc current transfer ratio v ce = 5.0 v, i f = 1.0 ma h11b1 ctr dc 500 % h11b2 ctr dc 200 % h11b3 ctr dc 100 % parameter test condition symbol min ty p. max unit switching times i f = 5.0 ma, v ce = 10 v, r l = 100 ? t on 5.0 s t off 30 s figure 1. forward voltage vs. forward current ih11b1_01 if - forward current - ma 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1. 3 1.4 vf - forward voltage - v ta = -55c ta = 25c ta = 100c figure 2.ormaliedon-aturatedandaturatedct c . current ih11b1_02 .1 1 10 100 if - led current - ma nctrce - normalized ctrce 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 vce=1v vce=5v normalized to: vce = 5 v if = 1 ma
www.vishay.com 4 document number 83609 rev. 1.5, 26-oct-04 h11b1/ h11b2/ h11b3 vishay semiconductors figure 3. normalized non-saturated and saturated i ce vs. led current figure 4. normalized non-saturated and saturated collector- emitter current vs. led current figure 5. non-saturated and saturated hfe vs. base current ih11b1_03 100 1 .1 .01 .1 1 10 100 vce=1v vce=5v if - led current - ma nice - normalized ice if=2ma vce=5v normalized to: 10 ih11b1_04 100 1 .1 .001 .01 .1 1 10 vce=1v vce=5v if - led current - ma nice - normalized ice if=10ma vce=5v normalized to: 10 ih11b1_05 .01 .1 1 10 100 0 2000 4000 6000 8000 10000 vce = 5 v vce = 1 v ib - base current - a hfe - forward transfer gain figure 6.lowtohighpropagationdelays.collectorload resistanceandledcurrent figure 7.hightolowpropagationdelays.collectorload resistanceandledcurrent figure 8.switchingaeform ih11b1_06 0 5 10 15 20 0 20 40 60 80 vcc=5v vth = 1.5 v 220 ? ? 470 ? if - led current - ma tplh - low/high propagation delay - s 100 ? 1.0 k ? ih11b1_07 0 5 10 15 20 0 5 10 15 20 100 ? 1k ? if - led current - ma tphl - high/low propagation delay - s vcc = 5 v vth = 1.5 v ih11b1_08 i f t r v o t d t s t f t phl t plh v th = 1.5 v
h11b1/ h11b2/ h11b3 document number 83609 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) ih11b1_09 v o r l v cc =10v i f =5 ma f=10 khz, df=50% figure 9. switching schematic i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a
www.vishay.com 6 document number 83609 rev. 1.5, 26-oct-04 h11b1/ h11b2/ h11b3 vishay semiconductors .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
h11b1/ h11b2/ h11b3 document number 83609 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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